BSM75GAR120DN2HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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BSM75GAR120DN2HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X7
Number of Elements
1
Configuration
Single
Power - Max
235W
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
400μA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
30A
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
1nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$87.327765
$87.327765
10
$82.384684
$823.84684
100
$77.721400
$7772.14
500
$73.322075
$36661.0375
1000
$69.171769
$69171.769
BSM75GAR120DN2HOSA1 Product Details
BSM75GAR120DN2HOSA1 Description
Produced by Infineon Technologies is BSM75GAR120DN2HOSA1. It falls within the category of electronic components, ICs. It is used in a variety of industries, including Industrial Electronic Point of Sale (EPOS), Business Systems, Business Machines, and Personal Electronics Tablets. Transistor IGBT Module N-CH 1200V 105A 20V Screw Mount Tray are this part's key specs. It is also environmentally friendly and RoHS compliant (lead free).