FZ2400R17HP4B9HOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FZ2400R17HP4B9HOSA2 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
50 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
9
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
15.5kW
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
JESD-30 Code
R-XUFM-X3
Number of Elements
3
Configuration
Single Switch
Element Configuration
Single
Case Connection
ISOLATED
Power - Max
15500W
Transistor Application
POWER CONTROL
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
2.4kA
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.7kV
Voltage - Collector Emitter Breakdown (Max)
1700V
Current - Collector (Ic) (Max)
4800A
Turn On Time
760 ns
Vce(on) (Max) @ Vge, Ic
2.25V @ 15V, 2400A
Turn Off Time-Nom (toff)
1800 ns
IGBT Type
Trench
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
195nF @ 25V
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
500
$951.153431
$475576.7155
FZ2400R17HP4B9HOSA2 Product Details
FZ2400R17HP4B9HOSA2 Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) powermodules provide low conduction and switching losses aswell as short circuit ruggedness. They are designed forapplications such as motor control, uninterrupted powersupplies (UPS) and general inverters where short circuitruggedness is a required feature.