BSO119N03S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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BSO119N03S Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
Series
OptiMOS™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
16.3mOhm
Terminal Finish
MATTE TIN
Additional Feature
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
9A
[email protected] Reflow Temperature-Max (s)
40
Pin Count
8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.56W Ta
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.56W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11.9m Ω @ 11A, 10V
Vgs(th) (Max) @ Id
2V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
1730pF @ 15V
Current - Continuous Drain (Id) @ 25°C
9A Ta
Gate Charge (Qg) (Max) @ Vgs
13nC @ 5V
Rise Time
3.8ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3.8 ns
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
9A
Threshold Voltage
1.6V
JEDEC-95 Code
MS-012AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
9A
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Nominal Vgs
1.6 V
Feedback Cap-Max (Crss)
93 pF
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
BSO119N03S Product Details
BSO119N03S Description
BSO119N03S is a 30V OptiMOS?2 Power-Transistor manufactured by Infineon. The OptiMOS?2 power MOSFET technology reduces the resistive and switching loss components significantly. The gate charge – and consequently the “figure-of-merit” of our devices – has become the new industry benchmark. More importantly, the output charge is reduced to extremely low levels, minimizing the total switching losses for a given output current.