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BSO119N03S

BSO119N03S

BSO119N03S

Infineon Technologies

BSO119N03S datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSO119N03S Datasheet

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Termination SMD/SMT
ECCN Code EAR99
Resistance 16.3mOhm
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 9A
[email protected] Reflow Temperature-Max (s) 40
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.56W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56W
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.9m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 2V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 15V
Current - Continuous Drain (Id) @ 25°C 9A Ta
Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
Rise Time 3.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.8 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 9A
Threshold Voltage 1.6V
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 9A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Nominal Vgs 1.6 V
Feedback Cap-Max (Crss) 93 pF
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
BSO119N03S Product Details

BSO119N03S Description


BSO119N03S is a 30V OptiMOS?2 Power-Transistor manufactured by Infineon. The OptiMOS?2 power MOSFET technology reduces the resistive and switching loss components significantly. The gate charge – and consequently the “figure-of-merit” of our devices – has become the new industry benchmark. More importantly, the output charge is reduced to extremely low levels, minimizing the total switching losses for a given output current.



BSO119N03S Features


  • Fast switching MOSFET for SMPS

  • Optimized technology for notebook DC/DC

  • N-channel

  • Logic level

  • Excellent gate charge x RDS(on) product (FOM)

  • Very low on-resistance RDS(on)

  • Avalanche rated

  • dv/dt rated



BSO119N03S Applications


  • Desktop and notebook computers

  • Consumer equipment

  • PDAs

  • MP3 players

  • Portable electronics


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