BSP149L6327HTSA1

new-10%

Manufacturer part number:BSP149L6327HTSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 200V 0.66A Automotive 4-Pin(3+Tab) SOT-223 T/R

Case Package:SOT-23

Datasheet:BSP149L6327HTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	5.1 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	1.8 Ω @ 660mA, 10V
Vgs(th) (Max) @ Id	1V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds	430pF @ 25V
Current - Continuous Drain (Id) @ 25°C	660mA Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 5V
Rise Time	3.4ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	0V 10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	660mA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.66A
Pulsed Drain Current-Max (IDM)	2.6A
DS Breakdown Voltage-Min	200V
FET Feature	Depletion Mode
Radiation Hardening	No
RoHS Status	RoHS Compliant