BSF050N03LQ3GXUMA1

new-10%

Manufacturer part number:BSF050N03LQ3GXUMA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 30V 15A 6-Pin WDSON

Case Package:SOT-23

Datasheet:BSF050N03LQ3GXUMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	3-WDSON
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Series	OptiMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	2
ECCN Code	EAR99
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	2
JESD-30 Code	R-MBCC-N2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.2W Ta 28W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3000pF @ 15V
Current - Continuous Drain (Id) @ 25°C	15A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	15A
Drain-source On Resistance-Max	0.007Ohm
Pulsed Drain Current-Max (IDM)	240A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	20 mJ
RoHS Status	RoHS Compliant