BSP171PE6327

new-10%

Manufacturer part number:BSP171PE6327

Manufacturer:Infineon Technologies

Description:MOSFET P-CH 60V 1.9A SOT223

Case Package:SOT-23

Datasheet:BSP171PE6327 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1999
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	-60V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-1.9A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id	2V @ 460μA
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.9A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	8ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	1.9A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.3Ohm
Feedback Cap-Max (Crss)	55 pF
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead