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TK50E08K3,S1X(S

  • TK50E08K3,S1X(S
  • TK50E08K3,S1X(S

TK50E08K3,S1X(S

TK50E08K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 75V 50A TO-220AB

SOT-23

TK50E08K3,S1X(S Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Packaging Tube
Published 2009
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 104W
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Drain to Source Voltage (Vdss) 75V
Continuous Drain Current (ID) 50A
Rds On Max 12 mΩ
RoHS Status RoHS Compliant

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