BSP295H6327XTSA1

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BSP295H6327XTSA1

Manufacturer part number:BSP295H6327XTSA1

Manufacturer:Infineon Technologies

Description:BSP295H6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSP295H6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2001
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	4
JESD-30 Code	R-PDSO-G4
Number of Elements	1
Power Dissipation-Max	1.8W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
Turn On Delay Time	5.4 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id	1.8V @ 400μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	368pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.8A Ta
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	9.9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	1.8A
Threshold Voltage	1.1V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.5Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	7.2A
Dual Supply Voltage	60V
Nominal Vgs	1.1 V
Height	1.6mm
Length	6.5mm
Width	3.5mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free