2N7002W-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website
SOT-23
2N7002W-7-F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Weight
6.010099mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
7.5Ohm
Subcategory
FET General Purpose Powers
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
115mA
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
200mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
200mW
Turn On Delay Time
7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Current - Continuous Drain (Id) @ 25°C
115mA Ta
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs (Max)
±20V
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
115mA
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
70V
Dual Supply Voltage
60V
Nominal Vgs
2 V
Feedback Cap-Max (Crss)
5 pF
Height
1mm
Length
2.2mm
Width
1.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2N7002W-7-F Product Details
2N7002W-7-F Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.The drain current is the maximum continuous current the device can conduct, and this device has 115mA continuous drain current (ID).This device has 70V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 70V.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.
2N7002W-7-F Features
a continuous drain current (ID) of 115mA a drain-to-source breakdown voltage of 70V voltage the turn-off delay time is 11 ns a threshold voltage of 2V
2N7002W-7-F Applications
There are a lot of Diodes Incorporated 2N7002W-7-F applications of single MOSFETs transistors.
Power Tools
Solar Inverter
Micro Solar Inverter
Industrial Power Supplies
Lighting
LCD/LED/ PDP TV Lighting
Server power supplies
PFC stages, hard switching PWM stages and resonant switching