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2N7002W-7-F

2N7002W-7-F

2N7002W-7-F

Diodes Incorporated

2N7002W-7-F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Diodes Incorporated stock available on our website

SOT-23

2N7002W-7-F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 6.010099mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Resistance 7.5Ohm
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 115mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 200mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 200mW
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.5 Ω @ 50mA, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
Current - Continuous Drain (Id) @ 25°C 115mA Ta
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 115mA
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 70V
Dual Supply Voltage 60V
Nominal Vgs 2 V
Feedback Cap-Max (Crss) 5 pF
Height 1mm
Length 2.2mm
Width 1.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.07644 $0.22932
6,000 $0.06720 $0.4032
15,000 $0.05796 $0.8694
30,000 $0.05488 $1.6464
75,000 $0.05180 $3.885
150,000 $0.04564 $6.846
2N7002W-7-F Product Details

2N7002W-7-F Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 50pF @ 25V.The drain current is the maximum continuous current the device can conduct, and this device has 115mA continuous drain current (ID).This device has 70V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 70V.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor's threshold voltage is 2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.This device uses no drive voltage (5V 10V) to reduce its overall power consumption.

2N7002W-7-F Features


a continuous drain current (ID) of 115mA
a drain-to-source breakdown voltage of 70V voltage
the turn-off delay time is 11 ns
a threshold voltage of 2V

2N7002W-7-F Applications


There are a lot of Diodes Incorporated 2N7002W-7-F applications of single MOSFETs transistors.

  • Power Tools
  • Solar Inverter
  • Micro Solar Inverter
  • Industrial Power Supplies
  • Lighting
  • LCD/LED/ PDP TV Lighting
  • Server power supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • AC-DC Power Supply
  • LCD/LED TV

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