BSP296E6327

new-10%

Manufacturer part number:BSP296E6327

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 1.1A SOT223

Case Package:SOT-23

Datasheet:BSP296E6327 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2001
Series	SIPMOS®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	1A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.79W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.79W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	700m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id	1.8V @ 400μA
Input Capacitance (Ciss) (Max) @ Vds	364pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.1A Ta
Gate Charge (Qg) (Max) @ Vgs	17.2nC @ 10V
Rise Time	7.9ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	21.4 ns
Turn-Off Delay Time	37.4 ns
Continuous Drain Current (ID)	1.1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1A
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	4A
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead