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BSP317PE6327T

BSP317PE6327T

BSP317PE6327T

Infineon Technologies

MOSFET P-CH 250V 0.43A SOT223

SOT-23

BSP317PE6327T Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Supplier Device Package PG-SOT223-4
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series SIPMOS®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Voltage - Rated DC -250V
Technology MOSFET (Metal Oxide)
Current Rating -430mA
Power Dissipation-Max 1.8W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 4Ohm @ 430mA, 10V
Vgs(th) (Max) @ Id 2V @ 370μA
Input Capacitance (Ciss) (Max) @ Vds 262pF @ 25V
Current - Continuous Drain (Id) @ 25°C 430mA Ta
Gate Charge (Qg) (Max) @ Vgs 15.1nC @ 10V
Rise Time 11.1ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 430mA
Input Capacitance 262pF
Rds On Max 4 Ω
RoHS Status RoHS Compliant
Lead Free Lead Free

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