SUD35N05-26L-E3

new-10%

Manufacturer part number:SUD35N05-26L-E3

Manufacturer:Vishay Siliconix

Description:MOSFET 55V 35A 50W

Case Package:SOT-23

Datasheet:SUD35N05-26L-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Supplier Device Package	TO-252, (D-Pak)
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Termination	SMD/SMT
Resistance	20mOhm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	7.5W Ta 50W Tc
Element Configuration	Single
Power Dissipation	50W
Turn On Delay Time	5 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	20mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	1V @ 250μA (Min)
Input Capacitance (Ciss) (Max) @ Vds	885pF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 5V
Rise Time	18ns
Drain to Source Voltage (Vdss)	55V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	55V
Dual Supply Voltage	55V
Input Capacitance	885pF
Drain to Source Resistance	20mOhm
Rds On Max	20 mΩ
Nominal Vgs	1 V
Height	2.3876mm
Length	6.7056mm
Width	6.223mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free