BSP373 E6327

new-10%

Manufacturer part number:BSP373 E6327

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 100V 1.7A SOT-223

Case Package:SOT-23

Datasheet:BSP373 E6327 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Series	SIPMOS®
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	255
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	300m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	550pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.7A Ta
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	1.7A
Drain-source On Resistance-Max	0.3Ohm
Pulsed Drain Current-Max (IDM)	6.8A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	45 mJ
RoHS Status	Non-RoHS Compliant