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BSS159N E6327

BSS159N E6327

BSS159N E6327

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

SOT-23

BSS159N E6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series SIPMOS®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360mW Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.5 Ω @ 160mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 26μA
Input Capacitance (Ciss) (Max) @ Vds 44pF @ 25V
Current - Continuous Drain (Id) @ 25°C 230mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 0V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 0.23A
DS Breakdown Voltage-Min 60V
FET Feature Depletion Mode
Feedback Cap-Max (Crss) 5.9 pF
RoHS Status Non-RoHS Compliant

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