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BSS209PW L6327

BSS209PW L6327

BSS209PW L6327

Infineon Technologies

MOSFET P-CH 20V 580MA SOT-323

SOT-23

BSS209PW L6327 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish MATTE TIN
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
HTS Code 8541.21.00.95
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 300mW Ta
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Rds On (Max) @ Id, Vgs 550m Ω @ 580mA, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 3.5μA
Input Capacitance (Ciss) (Max) @ Vds 89.9pF @ 15V
Current - Continuous Drain (Id) @ 25°C 580mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.38nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
Vgs (Max) ±12V
Drain Current-Max (Abs) (ID) 0.58A
Drain-source On Resistance-Max 0.55Ohm
DS Breakdown Voltage-Min 20V
RoHS Status RoHS Compliant

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