BSS670S2LH6327XTSA1

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BSS670S2LH6327XTSA1

Manufacturer part number:BSS670S2LH6327XTSA1

Manufacturer:Infineon Technologies

Description:BSS670S2LH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSS670S2LH6327XTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC	55V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	540mA
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	360mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	360mW
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	650m Ω @ 270mA, 10V
Vgs(th) (Max) @ Id	2V @ 2.7μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	75pF @ 25V
Current - Continuous Drain (Id) @ 25°C	540mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.26nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	540mA
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	55V
Drain Current-Max (Abs) (ID)	0.54A
Drain-source On Resistance-Max	0.825Ohm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free