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BSS670S2LH6327XTSA1

BSS670S2LH6327XTSA1

BSS670S2LH6327XTSA1

Infineon Technologies

BSS670S2LH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSS670S2LH6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2003
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Voltage - Rated DC 55V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 540mA
Pin Count 3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 360mW Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 360mW
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 650m Ω @ 270mA, 10V
Vgs(th) (Max) @ Id 2V @ 2.7μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 75pF @ 25V
Current - Continuous Drain (Id) @ 25°C 540mA Ta
Gate Charge (Qg) (Max) @ Vgs 2.26nC @ 10V
Rise Time 25ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 540mA
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 55V
Drain Current-Max (Abs) (ID) 0.54A
Drain-source On Resistance-Max 0.825Ohm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.07768 $0.23304
6,000 $0.07053 $0.42318
15,000 $0.06338 $0.9507
30,000 $0.05980 $1.794
75,000 $0.05372 $4.029
150,000 $0.05194 $7.791
BSS670S2LH6327XTSA1 Product Details

BSS670S2LH6327XTSA1 Description


Existing layout geometries used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering processes are all compatible with the DirectFET package. This product is designed for general use and can be used to a variety of settings. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.



BSS670S2LH6327XTSA1 Features


? N-channel enhancement mode


? AEC accreditation


? MSL1 reflow to 260°C maximum


? 175°C operating temperature


? An environmentally friendly product (RoHS compliant)


? To the nth degree, avalanche-proofed



BSS670S2LH6327XTSA1 Applications


Switching applications


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