BSH111BKR

new-10%

Manufacturer part number:BSH111BKR

Manufacturer:Nexperia USA Inc.

Description:MOSFET 55V N-channel Trench MOSFET

Case Package:SOT-23

Datasheet:BSH111BKR Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2014
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	302mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	302mW
Turn On Delay Time	8.3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	30pF @ 30V
Current - Continuous Drain (Id) @ 25°C	210mA Ta
Gate Charge (Qg) (Max) @ Vgs	0.5nC @ 4.5V
Rise Time	8.4ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V
Vgs (Max)	±10V
Fall Time (Typ)	4.8 ns
Turn-Off Delay Time	12.6 ns
Continuous Drain Current (ID)	210mA
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	4Ohm
Drain to Source Breakdown Voltage	55V
Max Junction Temperature (Tj)	150°C
Ambient Temperature Range High	150°C
Feedback Cap-Max (Crss)	7 pF
Height	1.1mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free