BSZ023N04LSATMA1

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Manufacturer part number:BSZ023N04LSATMA1

Manufacturer:Infineon Technologies

Description:MOSFET MV POWER MOS

Case Package:SOT-23

Datasheet:BSZ023N04LSATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2012
Series	OptiMOS™
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	S-PDSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 69W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.35m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2630pF @ 20V
Current - Continuous Drain (Id) @ 25°C	22A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Rise Time	38ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	22A
Drain-source On Resistance-Max	0.0032Ohm
Pulsed Drain Current-Max (IDM)	160A
DS Breakdown Voltage-Min	40V
Avalanche Energy Rating (Eas)	130 mJ
RoHS Status	RoHS Compliant