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BSZ036NE2LSATMA1

  • BSZ036NE2LSATMA1
  • BSZ036NE2LSATMA1

BSZ036NE2LSATMA1

BSZ036NE2LSATMA1

Infineon Technologies

BSZ036NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

BSZ036NE2LSATMA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 18 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-N3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 37W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
Turn On Delay Time 3.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 12V
Current - Continuous Drain (Id) @ 25°C 16A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 2.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.2 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 25V
Avalanche Energy Rating (Eas) 40 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $4.178779 $4.178779
10 $3.942244 $39.42244
100 $3.719099 $371.9099
500 $3.508583 $1754.2915
1000 $3.309984 $3309.984
BSZ036NE2LSATMA1 Product Details

Description


The BSZ036NE2LSATMA1 is an OptiMOSTMPower-MOSFET. Infineon establishes new benchmarks in power density and energy efficiency for discrete power MOSFETs and systems in packages with the OptiMOSTM 25V product family. For the demanding needs of voltage regulator solutions in servers, datacom, and telecom applications, OptiMOSTM 25V is the optimum option because of its extremely low gate and output charge, lowest on-state resistance, and small footprint packages, readily available in half-bridge form (power stage 5x6).



Features


  • N-channel

  • Qualified according to JEDEC1) for target applications

  • Pb-free lead plating; RoHS compliant

  • Halogen-free according to IEC61249-2-21

  • Excellent gate charge x R DS(on) product (FOM)

  • Very low on-resistance R DS(on) @ V GS=4.5 V

  • 100% avalanche tested

  • Superior thermal resistance

  • Optimized for high-performance Buck converter (Server, VGA)

  • Very Low FOMQOSS for High-Frequency SMPS

  • Low FOMSW for High-Frequency SMPS



Applications


  • DC-DC

  • VRD/VRM

  • LED

  • Motor control

  • Onboard charger

  • Mainboard

  • Notebook


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