FQD2N100TM

new-10%

FQD2N100TM

Manufacturer part number:FQD2N100TM

Manufacturer:ON Semiconductor

Description:FQD2N100TM datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQD2N100TM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	260.37mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	9Ohm
Subcategory	FET General Purpose Power
Voltage - Rated DC	900V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Current Rating	1.6A
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta 50W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9 Ω @ 800mA, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	520pF @ 25V
Current - Continuous Drain (Id) @ 25°C	1.6A Tc
Gate Charge (Qg) (Max) @ Vgs	15.5nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	1.6A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	6.4A
Max Junction Temperature (Tj)	150°C
Nominal Vgs	5 V
Height	2.517mm
Length	6.6mm
Width	6.1mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free