BSZ042N06NSATMA1

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BSZ042N06NSATMA1

Manufacturer part number:BSZ042N06NSATMA1

Manufacturer:Infineon Technologies

Description:BSZ042N06NSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSZ042N06NSATMA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Published	2006
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Reach Compliance Code	not_compliant
Pin Count	8
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 69W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2.8V @ 36μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	2000pF @ 30V
Current - Continuous Drain (Id) @ 25°C	17A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	7ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	60V
Drain-source On Resistance-Max	0.0042Ohm
Feedback Cap-Max (Crss)	44 pF
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead