NTD70N03RG

new-10%

Manufacturer part number:NTD70N03RG

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 25V 10A DPAK

Case Package:SOT-23

Datasheet:NTD70N03RG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	72A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1.36W Ta 62.5W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.87W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1333pF @ 20V
Current - Continuous Drain (Id) @ 25°C	10A Ta 32A Tc
Gate Charge (Qg) (Max) @ Vgs	13.2nC @ 5V
Rise Time	1.3ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1.3 ns
Turn-Off Delay Time	18.4 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	62.8A
Drain-source On Resistance-Max	0.013Ohm
Drain to Source Breakdown Voltage	25V
Pulsed Drain Current-Max (IDM)	140A
Avalanche Energy Rating (Eas)	71.7 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free