BSZ076N06NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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BSZ076N06NS3GATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
8
JESD-30 Code
S-PDSO-N5
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.1W Ta 69W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 35μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
4000pF @ 30V
Current - Continuous Drain (Id) @ 25°C
20A Tc
Gate Charge (Qg) (Max) @ Vgs
50nC @ 10V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
5 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
60V
Drain-source On Resistance-Max
0.0076Ohm
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.943069
$3.943069
10
$3.719876
$37.19876
100
$3.509317
$350.9317
500
$3.310677
$1655.3385
1000
$3.123280
$3123.28
BSZ076N06NS3GATMA1 Product Details
BSZ076N06NS3GATMA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4000pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 20A.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device supports dual supply voltages maximally powered by 60V.This device uses no drive voltage (10V) to reduce its overall power consumption.
BSZ076N06NS3GATMA1 Features
a continuous drain current (ID) of 20A the turn-off delay time is 20 ns
BSZ076N06NS3GATMA1 Applications
There are a lot of Infineon Technologies BSZ076N06NS3GATMA1 applications of single MOSFETs transistors.
Load switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
PFC stages, hard switching PWM stages and resonant switching