FQD3N50CTM

new-10%

Manufacturer part number:FQD3N50CTM

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 500V 2.5A DPAK

Case Package:SOT-23

Datasheet:FQD3N50CTM Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	35W Tc
Element Configuration	Single
Power Dissipation	35W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.5 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	365pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.5A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	25 ns
Turn-Off Delay Time	35 ns
Continuous Drain Current (ID)	2.5A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	500V
Height	2.3mm
Length	6.6mm
Width	6.1mm
RoHS Status	RoHS Compliant