BUZ30A

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Manufacturer part number:BUZ30A

Manufacturer:Infineon Technologies

Description:BUZ30A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BUZ30A Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	130mOhm
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	21A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Lead Pitch	2.54mm
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Turn On Delay Time	30 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	130m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C	21A Tc
Rise Time	70ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	90 ns
Turn-Off Delay Time	250 ns
Reverse Recovery Time	180 ns
Continuous Drain Current (ID)	21A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	84A
Dual Supply Voltage	200V
Avalanche Energy Rating (Eas)	450 mJ
Nominal Vgs	3 V
Height	9.25mm
Length	10mm
Width	4.4mm
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Contains Lead