TSM120NA03CR RLG

new-10%

Manufacturer part number:TSM120NA03CR RLG

Manufacturer:Taiwan Semiconductor Corporation

Description:MOSFET N-CH 30V 39A 8PDFN

Case Package:SOT-23

Datasheet:TSM120NA03CR RLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Digi-Reel®
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	33W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.7m Ω @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	562pF @ 15V
Current - Continuous Drain (Id) @ 25°C	39A Tc
Gate Charge (Qg) (Max) @ Vgs	9.2nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	11A
Drain-source On Resistance-Max	0.0149Ohm
Pulsed Drain Current-Max (IDM)	156A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	36.5 mJ
RoHS Status	ROHS3 Compliant