BUZ31 E3046

new-10%

Manufacturer part number:BUZ31 E3046

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 14.5A TO262-3

Case Package:SOT-23

Datasheet:BUZ31 E3046 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	THROUGH-HOLE
Reach Compliance Code	unknown
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	95W Tc
Operating Mode	ENHANCEMENT MODE
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	200m Ω @ 9A, 5V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1120pF @ 25V
Current - Continuous Drain (Id) @ 25°C	14.5A Tc
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	13.5A
Drain-source On Resistance-Max	0.2Ohm
Pulsed Drain Current-Max (IDM)	54A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	200 mJ