IXUN350N10

new-10%

Manufacturer part number:IXUN350N10

Manufacturer:IXYS

Description:MOSFET N-CH 100V 350A SOT-227B

Case Package:SOT-23

Datasheet:IXUN350N10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Resistance	2.5MOhm
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	830W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	965W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.5m Ω @ 175A, 10V
Vgs(th) (Max) @ Id	4V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds	27000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	350A Tc
Gate Charge (Qg) (Max) @ Vgs	640nC @ 10V
Rise Time	175ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	150 ns
Turn-Off Delay Time	650 ns
Continuous Drain Current (ID)	350A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Avalanche Energy Rating (Eas)	5000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free