BUZ73AL

new-10%

Manufacturer part number:BUZ73AL

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 200V 5.5A TO-220AB

Case Package:SOT-23

Datasheet:BUZ73AL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	SIPMOS®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory	FET General Purpose Power
Voltage - Rated DC	200V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	5.5A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	40W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	600m Ω @ 3.5A, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	840pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Rise Time	60ns
Drive Voltage (Max Rds On,Min Rds On)	5V
Vgs (Max)	±20V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	5.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	5.8A
Drain-source On Resistance-Max	0.6Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	22A
Nominal Vgs	1.6 V
RoHS Status	RoHS Compliant
Lead Free	Lead Free