DDB2U30N08VRBOMA1 Description

DDB2U30N08VRBOMA1 is a 800v IGBT. The transistor DDB2U30N08VRBOMA1 can be applied in Industrial, Lighting, Enterprise systems, Datacenter & enterprise computing, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor DDB2U30N08VRBOMA1 is in the tray package with 83W power dissipation.

DDB2U30N08VRBOMA1 Features

Repetitive peak reverse voltage: 800V

forward current RMS maximum per diode Tc = 80°C: 48A 

Surge forward current tp= 10 ms, Tvj= 25°C: 480A

Gate-emitter peak voltage VGEs: +/-20 V

Gate-emitter leakage current VcE=0 V,VGE= 20V, Tvj = 25°C IGEs: 400 nA

DDB2U30N08VRBOMA1 Applications

Industrial 

Lighting 

Enterprise systems 

Datacenter & enterprise computing 

Personal electronics 

Tablets