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DF160R12W2H3_B11

DF160R12W2H3_B11

DF160R12W2H3_B11

Infineon Technologies

DF160R12W2H3_B11 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

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DF160R12W2H3_B11 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 28 Weeks
Surface Mount NO
Transistor Element Material SILICON
Published 2013
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 19
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X19
Number of Elements 4
Configuration COMPLEX
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn On Time 49 ns
Collector Current-Max (IC) 50A
Turn Off Time-Nom (toff) 375 ns
Collector-Emitter Voltage-Max 1200V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $61.553000 $61.553
10 $58.068868 $580.68868
100 $54.781951 $5478.1951
500 $51.681086 $25840.543
1000 $48.755741 $48755.741
DF160R12W2H3_B11 Product Details

DF160R12W2H3_B11 Description


The DF160R12W2H3_B11 is an IGBT Module for Photovoltaic String and Multi-String Inverter.



DF160R12W2H3_B11 Features


  • A modular solution tailored for most inverter designs

  • Excellent efficiency and performance

  • High max. DC voltages achievable

  • Wide input voltage range, as boosters are included

  • Reactive power capability is supported

  • Simple assembly due to PressFIT pins (solderable)



DF160R12W2H3_B11 Applications


  • Single-phase photovoltaic inverters

  • Three-phase photovoltaic inverters


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