FD600R17KE3KB5NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD600R17KE3KB5NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~125°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Insulated Gate BIP Transistors
Number of Elements
1
Configuration
Single Chopper
Power - Max
4300W
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1700V
Power Dissipation-Max (Abs)
4300W
Vce(on) (Max) @ Vge, Ic
2.45V @ 15V, 600A
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
54nF @ 25V
VCEsat-Max
2.45 V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
FD600R17KE3KB5NOSA1 Product Details
FD600R17KE3KB5NOSA1 Description
FD600R17KE3KB5NOSA1 is a 1700v IGBT-Modules. The FD600R17KE3KB5NOSA1 can be applied in Communications equipment, Datacom modules, Industrial, Pro audio, video & signage, Enterprise systems, and Datacenter & enterprise computing applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FD600R17KE3KB5NOSA1 is in the tray package with 4kW Power dissipation.
FD600R17KE3KB5NOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1700v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 950A
Repetitive peak collector current Tp = 1 ms: 1200A