DF200R12PT4B6BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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DF200R12PT4B6BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Configuration
Three Phase Inverter
Power - Max
1100W
Halogen Free
Not Halogen Free
Input
Standard
Current - Collector Cutoff (Max)
15μA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
300A
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 200A
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
12.5nF @ 25V
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$254.754812
$254.754812
10
$246.377961
$2463.77961
25
$244.665304
$6116.6326
50
$242.964552
$12148.2276
100
$237.967240
$23796.724
500
$220.953797
$110476.8985
DF200R12PT4B6BOSA1 Product Details
DF200R12PT4B6BOSA1 Description
The DF200R12PT4B6BOSA1 is an EconoPACK?4 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC. The usage of an IGBT power module, which serves as a switch, allows for exceptionally quick and highly energy-efficient power on and off operations. The IGBT power module is quickly replacing other devices in high-power applications because of its improved switching, temperature, weight, and cost performance.