APT150GN60JDQ4

new-10%

Manufacturer part number:APT150GN60JDQ4

Manufacturer:Microsemi Corporation

Description:IGBT MOD 600V 220A 536W ISOTOP

Case Package:SOT-23

Datasheet:APT150GN60JDQ4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	25 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Weight	30.000004g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Published	1999
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	HIGH RELIABILITY, UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	536W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	220A
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Turn On Delay Time	44 ns
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Turn-Off Delay Time	430 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	220A
Current - Collector Cutoff (Max)	50μA
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.5V
Input Capacitance	9.2nF
Turn On Time	154 ns
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 150A
Turn Off Time-Nom (toff)	575 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Gate-Emitter Voltage-Max	30V
Input Capacitance (Cies) @ Vce	9.2nF @ 25V
Gate-Emitter Thr Voltage-Max	6.5V
Height	9.6mm
Length	38.2mm
Width	25.4mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free