Welcome to Hotenda.com Online Store!

logo
userjoin
Home

DF400R12KE3HOSA1

DF400R12KE3HOSA1

DF400R12KE3HOSA1

Infineon Technologies

DF400R12KE3HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

DF400R12KE3HOSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 2000W
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 580A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 400A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 28nF @ 25V
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $170.740096 $170.740096
10 $165.125818 $1651.25818
25 $163.977972 $4099.4493
50 $162.838106 $8141.9053
100 $159.488840 $15948.884
500 $148.086203 $74043.1015
DF400R12KE3HOSA1 Product Details

DF400R12KE3HOSA1 Description


DF400R12KE3HOSA1 is a 1200v IGBT-Modules. The DF400R12KE3HOSA1 can be applied in Industrial, Grid infrastructure, Enterprise systems, Enterprise machines, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor DF400R12KE3HOSA1 is in the tray package with 2000W Power dissipation.



DF400R12KE3HOSA1 Features


Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 580A

Repetitive peak collector current Tp = 1 ms: 800A

Total power dissipation Tc = 25°C: 2000W

Gate-emitter peak voltage: ±20V



DF400R12KE3HOSA1 Applications


Industrial 

Grid infrastructure 

Enterprise systems 

Enterprise machine 

Personal electronics 

Tablets


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News