DF400R12KE3HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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DF400R12KE3HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
5
Number of Elements
1
Configuration
Single
Case Connection
ISOLATED
Power - Max
2000W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
580A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
400 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 400A
Turn Off Time-Nom (toff)
830 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
28nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$170.740096
$170.740096
10
$165.125818
$1651.25818
25
$163.977972
$4099.4493
50
$162.838106
$8141.9053
100
$159.488840
$15948.884
500
$148.086203
$74043.1015
DF400R12KE3HOSA1 Product Details
DF400R12KE3HOSA1 Description
DF400R12KE3HOSA1 is a 1200v IGBT-Modules. The DF400R12KE3HOSA1 can be applied in Industrial, Grid infrastructure, Enterprise systems, Enterprise machines, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor DF400R12KE3HOSA1 is in the tray package with 2000W Power dissipation.
DF400R12KE3HOSA1 Features
Collector-emitter voltage Tvj = 25°C: 1200v
Continuous DC collector current TC = 25°C, Tvj max = 150°C: 580A