FS50R12KT4B15BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FS50R12KT4B15BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
28
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Series
EconoPACK™2
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
28
ECCN Code
EAR99
Additional Feature
UL APPROVED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Number of Elements
6
Configuration
Three Phase Inverter
Case Connection
ISOLATED
Power - Max
280W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
50A
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
185 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 50A
Turn Off Time-Nom (toff)
490 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
2.8nF @ 25V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$75.27600
$752.76
FS50R12KT4B15BOSA1 Product Details
FS50R12KT4B15BOSA1 Description
IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.