F3L150R12W2H3B11BPSA1                          Description       

An IGBT is a is power semiconductor die and is the short form of insulated-gate bipolar transistor. An IGBT power module is the assembly and physical packaging of several IGBT power semiconductor dies in one package.

F3L150R12W2H3B11BPSA1                           Features                                          

Typische Anwendungen

·3-Level-Applikationen

·Solar Anwendungen

Elektrische Eigenschaften

·High Speed IGBT H3

·Niedrige Schaltverluste

·Tyjop =150℃

Mechanische Eigenschaften

·PressFIT Verbindungstechnik·RoHS konform

F3L150R12W2H3B11BPSA1                                          Applications

·3-Level-Applications

·Solar Applications