APT60GF120JRDQ3

new-10%

Manufacturer part number:APT60GF120JRDQ3

Manufacturer:Microsemi Corporation

Description:IGBT MOD 1200V 149A 625W ISOTOP

Case Package:SOT-23

Datasheet:APT60GF120JRDQ3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	29 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	ISOTOP
Number of Pins	4
Operating Temperature	-55°C~150°C TJ
Published	1999
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	625W
Current Rating	115A
Number of Elements	1
Configuration	Single
Power - Max	625W
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	149A
Current - Collector Cutoff (Max)	350μA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	7.08nF
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 100A
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	30V
Input Capacitance (Cies) @ Vce	7.08nF @ 25V
RoHS Status	RoHS Compliant
Lead Free	Lead Free