F3L15R12W2H3B27BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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F3L15R12W2H3B27BOMA1 Datasheet
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In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
34
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Configuration
3 Independent
Power - Max
145W
Halogen Free
Not Halogen Free
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
20A
Current - Collector Cutoff (Max)
1mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 15A
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
875pF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
15
$55.36000
$830.4
F3L15R12W2H3B27BOMA1 Product Details
F3L15R12W2H3B27BOMA1 Description
F3L15R12W2H3B27BOMA1 is a 1200v IGBT-module. The Electric IGBT modules have been developed to be used as switching elements for the power converters of variable-speed drives for motors, uninterruptable power supplies, and others. An IGBT is a semiconductor device that combines the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor.