FMG1G100US60H datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available on our website
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FMG1G100US60H Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Chassis Mount
Package / Case
7PM-GA
Supplier Device Package
7PM-GA
Operating Temperature
-40°C~150°C TJ
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Configuration
Single
Power - Max
400W
Input
Standard
Current - Collector Cutoff (Max)
250μA
Voltage - Collector Emitter Breakdown (Max)
600V
Current - Collector (Ic) (Max)
100A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 100A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
10.84nF @ 30V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$37.99000
$37.99
500
$37.6101
$18805.05
1000
$37.2302
$37230.2
1500
$36.8503
$55275.45
2000
$36.4704
$72940.8
2500
$36.0905
$90226.25
FMG1G100US60H Product Details
FMG1G100US60H Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS), and general inverters where short circuit ruggedness is a required feature.
FMG1G100US60H Features
UL Certified No. E209204
Short Circuit rated 10us @ Tc= 100°C, VGE= 15V
High-Speed Switching
Low Saturation Voltage : VCE(sat)= 2.2 V @ lc= 100A