FD800R33KL2CKB5NOSA1 Description

The FD800R33KL2CKB5NOSA1 is an IGBT Module N-CH 3.3KV 1.5KA. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.

FD800R33KL2CKB5NOSA1 Features

• Wide input voltage range, as boosters are included

• Reactive power capability is supported

• Simple assembly due to PressFIT pins (solderable)

• Modular solution tailored for most inverter designs

• Excellent efficiency and performance

• High maximum DC voltages achievable

FD800R33KL2CKB5NOSA1 Applications

• Battery chargers

• Three-phase PFC input for various applications such as air conditioners, fans and many more

• Single-phase photovoltaic inverters

• Three-phase photovoltaic inverters