FF1200R12KE3NOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF1200R12KE3NOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
36 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
10
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2002
Pbfree Code
no
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
10
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
10
Number of Elements
2
Configuration
2 Independent
Element Configuration
Dual
Power Dissipation
5kW
Case Connection
ISOLATED
Power - Max
5000W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
1.6kA
Current - Collector Cutoff (Max)
5mA
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.7V
Turn On Time
880 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 1200A
Turn Off Time-Nom (toff)
1140 ns
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
86nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2
$987.53000
$1975.06
FF1200R12KE3NOSA1 Product Details
FF1200R12KE3NOSA1 Description
The FF1200R12KE3NOSA1 is an IGBT Module 2 Independent 1200 V 5000 W Chassis Mount Module. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor dies into a single package is known as an IGBT power module.