FF1200R17KE3B2NOSA1 Description

FF1200R17KE3B2NOSA1 is a 1700v IGBT-Modules. The FF1200R17KE3B2NOSA1 can be applied in Industrial, Test & Measurement, Enterprise systems, Enterprise machines, Personal electronics, and Tablet applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF1200R17KE3B2NOSA1 is in the tray package with 6.60kW Power dissipation.

FF1200R17KE3B2NOSA1 Features

Collector-emitter voltage Tvj = 25°C: 1700v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 1700A

Repetitive peak collector current Tp = 1 ms: 2400A

Total power dissipation Tc = 25°C: 6.60W

Gate-emitter peak voltage: ±20V

FF1200R17KE3B2NOSA1 Applications

Industrial 

Test & Measurement 

Enterprise systems 

Enterprise machine 

Personal electronics 

Tablets