VS-GT400TH60N

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Manufacturer part number:VS-GT400TH60N

Manufacturer:Vishay Semiconductor Diodes Division

Description:IGBT MOD 600V 530A INT-A-PAK

Case Package:SOT-23

Datasheet:VS-GT400TH60N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 8)
Operating Temperature	175°C TJ
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	1.6kW
Number of Elements	1
Configuration	Half Bridge
Power - Max	1600W
Input	Standard
Collector Emitter Voltage (VCEO)	2.05V
Max Collector Current	530A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	30.8nF
Vce(on) (Max) @ Vge, Ic	2.05V @ 15V, 400A
IGBT Type	Trench
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	30.8nF @ 30V
RoHS Status	ROHS3 Compliant