FF1400R12IP4PBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF1400R12IP4PBOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
52 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
12
ECCN Code
EAR99
Additional Feature
UL APPROVED
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Reference Standard
IEC-61140
JESD-30 Code
R-PUFM-X12
Number of Elements
2
Configuration
2 Independent
Case Connection
ISOLATED
Power - Max
1400000W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
1400A
Turn On Time
340 ns
Vce(on) (Max) @ Vge, Ic
2.05V @ 15V, 1400A
Turn Off Time-Nom (toff)
1200 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
82nF @ 25V
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3
$725.67333
$2177.01999
FF1400R12IP4PBOSA1 Product Details
FF1400R12IP4PBOSA1 Description
FF1400R12IP4PBOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FF1400R12IP4PBOSA1 operates between -40°C~150°C, and its Current - Collector Cutoff (Max) is 1400A. The FF1400R12IP4PBOSA1 has 12 pins and it is available in Module packaging way. FF1400R12IP4PBOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.
FF1400R12IP4PBOSA1 Features
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 1400A
Input Capacitance (Cies) @ Vce: 82nF @ 25V
Voltage - Collector Emitter Breakdown (Max): 1200V