FD300R12KS4B5HOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FD300R12KS4B5HOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mount
Screw
Mounting Type
Chassis Mount
Package / Case
Module
Number of Pins
5
Operating Temperature
-40°C~125°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Configuration
Single Chopper
Element Configuration
Single
Power - Max
1950W
Halogen Free
Not Halogen Free
Input
Standard
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
300A
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
370A
Vce(on) (Max) @ Vge, Ic
3.75V @ 15V, 300A
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
20nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$181.184229
$181.184229
10
$175.226527
$1752.26527
25
$174.008468
$4350.2117
50
$172.798876
$8639.9438
100
$169.244736
$16924.4736
500
$157.144602
$78572.301
FD300R12KS4B5HOSA1 Product Details
FD300R12KS4B5HOSA1 Description
The FD300R12KS4B5HOSA1 is a 62 mm 1200 V, 300 A single switch IGBT module with IGBT2 Fast for high-frequency switching and Emitter Controlled High-Efficiency diode. Insulated-gate bipolar transistor, or IGBT, is a type of power semiconductor die. The physical construction and packaging of multiple IGBT power semiconductor die into a single package is known as an IGBT power module.
FD300R12KS4B5HOSA1 Features
Optimized switching characteristic like softness and reduced switching losses
Existing packages with higher current capability
RoHS compliant
Superior solution for frequency controlled inverter drives