FF150R12KE3GHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF150R12KE3GHOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~125°C
Published
2012
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Pin Count
7
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Single Chopper
Element Configuration
Dual
Case Connection
ISOLATED
Power - Max
780W
Halogen Free
Not Halogen Free
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
225A
Turn On Time
400 ns
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 150A
Turn Off Time-Nom (toff)
830 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
11nF @ 25V
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
10
$91.24100
$912.41
FF150R12KE3GHOSA1 Product Details
FF150R12KE3GHOSA1 Description
FF150R12KE3GHOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF150R12KE3GHOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.