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FF150R12MS4GBOSA1

FF150R12MS4GBOSA1

FF150R12MS4GBOSA1

Infineon Technologies

FF150R12MS4GBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF150R12MS4GBOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 11
Transistor Element Material SILICON
Operating Temperature -40°C~125°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 11
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 11
Qualification Status Not Qualified
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 1.25kW
Case Connection ISOLATED
Power - Max 1250W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 225A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.7V
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 150A
Turn Off Time-Nom (toff) 590 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 11nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead, Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
10 $112.97300 $1129.73
FF150R12MS4GBOSA1 Product Details

FF150R12MS4GBOSA1 Description


FF150R12MS4GBOSA1 is a 1200v IGBT-Modules. The FF150R12MS4GBOSA1 can be applied in  Automotive, Advanced driver assistance systems (ADAS), Enterprise systems, Enterprise machines, Personal electronics, and Home theater & entertainment applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FF150R12MS4GBOSA1 is in the tray package with 1250W Power dissipation.



FP15R06YE3B4BOMA1 Features


Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 225A

Repetitive peak collector current Tp = 1 ms: 300A

Total power dissipation Tc = 25°C: 1250W

Gate-emitter peak voltage: ±20V



FF150R12MS4GBOSA1 Applications


Automotive 

Advanced driver assistance systems (ADAS) 

Enterprise systems 

Enterprise machine 

Personal electronics 

Home theater & entertainment 


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