FF600R12KE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
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FF600R12KE4BOSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Operating Temperature
-40°C~150°C
Published
2002
Series
C
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
7
ECCN Code
EAR99
Additional Feature
UL APPROVED
Terminal Position
UPPER
JESD-30 Code
R-XUFM-X7
Number of Elements
2
Configuration
Half Bridge
Case Connection
ISOLATED
Input
Standard
Current - Collector Cutoff (Max)
5mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
600A
Turn On Time
232 ns
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 600A
Turn Off Time-Nom (toff)
630 ns
IGBT Type
Trench Field Stop
NTC Thermistor
No
Input Capacitance (Cies) @ Vce
38nF @ 25V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$183.64000
$183.64
10
$175.88100
$1758.81
FF600R12KE4BOSA1 Product Details
FF600R12KE4BOSA1 Description
FF600R12KE4BOSA1 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications.