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FF600R12KE4BOSA1

FF600R12KE4BOSA1

FF600R12KE4BOSA1

Infineon Technologies

FF600R12KE4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website

SOT-23

FF600R12KE4BOSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Operating Temperature -40°C~150°C
Published 2002
Series C
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
JESD-30 Code R-XUFM-X7
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Input Standard
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 600A
Turn On Time 232 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 600A
Turn Off Time-Nom (toff) 630 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 38nF @ 25V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $183.64000 $183.64
10 $175.88100 $1758.81
FF600R12KE4BOSA1 Product Details

FF600R12KE4BOSA1 Description


FF600R12KE4BOSA1 belongs to the family of insulated gate bipolar transistors provided by Infineon Technologies. It is a bipolar device with a MOS structure, which belongs to a power device with high-speed performance of power MOSFET and low-resistance performance of bipolar. It combines the advantages of a power transistor (Giant Transistor-GTR) and a power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications. 



FF600R12KE4BOSA1 Features


Energy saving

Easy installation and maintenance

Stable heat dissipation

Low switching losses

Unbeatable robustness



FF600R12KE4BOSA1 Applications


High-power converters

Motor drives

UPS systems

Wind turbines


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