FF200R12KT3EHOSA1

new-10%

Manufacturer part number:FF200R12KT3EHOSA1

Manufacturer:Infineon Technologies

Description:IGBT MODULE 1200V 1050W

Case Package:SOT-23

Datasheet:FF200R12KT3EHOSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Screw
Mounting Type	Chassis Mount
Package / Case	Module
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-40°C~125°C
Published	2002
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	7
ECCN Code	EAR99
Additional Feature	UL RECOGNIZED
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Number of Elements	2
Configuration	2 Independent
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	1050W
Transistor Application	POWER CONTROL
Halogen Free	Not Halogen Free
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	295A
Current - Collector Cutoff (Max)	5mA
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	215 ns
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 200A
Turn Off Time-Nom (toff)	680 ns
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	14nF @ 25V
RoHS Status	RoHS Compliant
Lead Free	Lead Free